SMG2314 PDF Datasheet

The SMG2314 is N-Channel MosFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SMG2314	N-Channel MosFET Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314 is uni	SeCoS
2	SMG2314N	N-Channel MosFET Elektronische Bauelemente SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ens	SeCoS
3	SMG2314NE	N-Channel MosFET Elektronische Bauelemente SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss	SeCoS

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SMG2361P	P-Channel Enhancement MOSFET SMG2361P Elektronische Bauelemente -3.4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensur	SeCoS Halbleitertechnologie
SMG2392N	N-Channel Enhancement Mode MOSFET SMG2392N Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ens	SeCoS Halbleitertechnologie
SMG2309	P-Channel MosFET Elektronische Bauelemente SMG2309 -3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2309 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG2309 is universally preferred for al	SeCoS
SMG2D60D	THYRISTOR	SanRex Corporation
SMG2D60C	THYRISTOR	SanRex Corporation
SMG240128E	LCD Module	Sunman
SMG240128D	LCD Module	Sunman

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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