SIS476DN PDF Datasheet

The SIS476DN is N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SIS476DN	N-Channel MOSFET New Product SiS476DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) 0.0025 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A)f 40g 40g Qg (Typ.) 22.5 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen IV Power MOSFET 100 % Rg an	Vishay

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Part No	Description	Manufacturers	PDF
SIS472DN	N-Channel MOSFET SiS472DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) 0.0089 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 9.8 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Optimized for High-Side Synchronous Re	Vishay
SIS478DN	N-Channel MOSFET New Product SiS478DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) 0.020 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 12 3.6 nC 12 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Test	Vishay
SIS472ADN	N-Channel 30V (D-S) MOSFET N-Channel 30 V (D-S) MOSFET SiS472ADN Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) Max. 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A)a, g 24 24 Qg (Typ.) 12.8 nC PowerPAK® 1212-8 FEATURES TrenchFET® Power MOSFET Optimized for High-Side Synchronous Rectifier Operation 100	Vishay
SIS496EDNT	N-Channel 30V (D-S) MOSFET	Vishay
SIS488DN	N-Channel 40V (D-S) MOSFET	Vishay
SIS478DN	N-Channel MOSFET	Vishay
SIS472DN	N-Channel MOSFET	Vishay

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