SIHG33N60E PDF Datasheet

The SIHG33N60E is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SIHG33N60E	Power MOSFET, Transistor www.vishay.com SiHG33N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. ( ) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 150 24 42 Single TO-247AC 0.099 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-fre	Vishay

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Part No	Description	Manufacturers	PDF
SIHG30N60E	Power MOSFET, Transistor SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 15 39 Single D FEATURES 650 0.125 Halogen-free According to IEC 61249-2-21 Definition Low Figure-of-Merit (	Vishay Siliconix
SiHG33N65E	Power MOSFET, Transistor www.vishay.com SiHG33N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. ( ) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 173 29 49 Single 0.090 D TO-247AC S D G G S N-Channel MOSFET FEATURES Low figure-of-merit (FOM) Ron x	Vishay
SiHG32N50D	Power MOSFET, Transistor www.vishay.com SiHG32N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 96 18 29 Single 0.150 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-fre	Vishay
SIHG80N60E	Power MOSFET, Transistor	Vishay
SIHG73N60E	Power MOSFET, Transistor	Vishay Siliconix
SIHG70N60EF	Power MOSFET, Transistor	Vishay
SIHG61N65EF	Power MOSFET, Transistor	Vishay

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