SIHFIBC40G PDF Datasheet

The SIHFIBC40G is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SiHFIBC40G	Power MOSFET, Transistor IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single D FEATURES 600 1.2 Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t	Vishay Siliconix

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Part No	Description	Manufacturers	PDF
SiHFI540G	Power MOSFET, Transistor IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 72 11 32 Single D FEATURES 100 0.077 Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8	Vishay Siliconix
SiHFI630G	Power MOSFET, Transistor IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 43 7.0 23 Single D FEATURES 200 0.40 TO-220 FULLPAK Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage	Vishay Siliconix
SiHFI520G	Power MOSFET, Transistor IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single D FEATURES 100 0.27 Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8	Vishay Siliconix
SIHFZ48S	Power MOSFET, Transistor	Vishay Siliconix
SIHFZ48L	Power MOSFET, Transistor	Vishay Siliconix
SIHFZ48	Power MOSFET, Transistor	Vishay
SiHFZ46-E3	Power MOSFET, Transistor	Vishay

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