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RJP4003ANS PDF Datasheet

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RJP4003ANS Purchase Information

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RJP4003ANS-00#Q1 - Renesas Electronics Corporation

IGBT 400V 15A



Stock: 51000

233 units: 1.29 USD each

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RJP4003ANS-00#Q1 - Renesas Electronics Corporation

IGBTs for Strobe, 400V, 150A, N-Channel '



Stock: 51000

1000 units: 1.11 USD each
500 units: 1.18 USD each
100 units: 1.23 USD each
25 units: 1.28 USD each

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Relevant Search Results

Part NoDescriptionManufacturersPDF
RJP020N06Drive Nch MOS FET

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4
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RJP1CS03DWAIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev
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RJP1CS04DWAIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev
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