RFP3055 PDF Datasheet

The RFP3055 is 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	RFP3055	12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 File Number 3648.2 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy	Intersil Corporation
2	RFP3055	12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown	Fairchild Semiconductor
3	RFP3055LE	11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circ	Fairchild Semiconductor
4	RFP3055LE	11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approachi	Intersil Corporation

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Part No	Description	Manufacturers	PDF
RFP3055LE	11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circ	Fairchild Semiconductor
RFP30N06LE	30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPIC	Fairchild Semiconductor
RFP30P05	30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic	Intersil Corporation
RFP3N50	3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs	Intersil Corporation
RFP3N45	3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs	Intersil Corporation
RFP30P06	30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs	Intersil Corporation
RFP30P05	30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs	Intersil Corporation

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