RF1S30N06LE PDF Datasheet

The RF1S30N06LE is 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	RF1S30N06LE	30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPIC	Fairchild Semiconductor
2	RF1S30N06LE	N-Channel Enhancement-Mode Power MOSFETs RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rati	Harris
3	RF1S30N06LESM	30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPIC	Fairchild Semiconductor
4	RF1S30N06LESM	30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Intersil Corporation

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Part No	Description	Manufacturers	PDF
RF1S30N06LESM	30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPIC	Fairchild Semiconductor
RF1S30P05SM	30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic	Intersil Corporation
RF1S30P06	30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic	Intersil Corporation
RF1S9640SM	11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs	Intersil Corporation
RF1S9630SM	6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs	Intersil Corporation
RF1S9540SM	19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs	Intersil Corporation
RF1S9530SM	P-Channel Power MOSFETs	Fairchild Semiconductor

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