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RD12M PDF DatasheetThe RD12M is ZENER DIODES 200 mW 3-PIN MINI MOLD. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | RD12M | ZENER DIODES 200 mW 3-PIN MINI MOLD DATA SHEET
ZENER DIODES
RD2.0M to RD47M
ZENER DIODES 200 mW 3-PIN MINI MOLD
DESCRIPTION
Type RD2.0M to RD47M Series are planar type zener diodes processing an allowable power dissipation of 200 mW.
0.4 +0.1 0.05
PACKAGE DIMENSIONS
(Unit: mm) 2.8 ± 0.2 1.5 0.65 +0.1 0.15
FEATURES
Planar
|
 NEC |
| 2 | RD12MVP1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
(a) 0.2+, -0.05 0.65+, -0.2 (c) (b) (b) 7.0+, -0.2 8.0+, -0.2 6.2+, -0.2 5.6+, -0.2 (d) 4.2+, -0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION
RD12MVP1 is a MOS FET type
|
 Mitsubishi Electric |
| 3 | RD12MVS1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
0.2+, -0.05
(0.22)
RoHS Compliance, DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor, 175MHz, 12W
OUT
|
Mitsubishi Electric |
| 4 | RD12MW | ZENER DIODES 200 mW 3-PIN MINI MOLD DATA SHEET
ZENER DIODES
RD2.0MW to RD39MW
ZENER DIODES 200 mW 3-PIN MINI MOLD
DESCRIPTION
Type RD2.0MW to RD39MW Series are 3-PIN Mini Mold Package zener diodes possessing allowable power dissipation of 200 mW.
0.4 0.05
PACKAGE DIMENSIONS
(Unit: mm) 2.8 ± 0.2
+0.1
FEATURES
VZ; Applied E2
|
NEC |
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