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PFF2N60 PDF Datasheet

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Part NoDescriptionManufacturersPDF
PFF13N50500V N-Channel MOSFET

Feb 2009 PFP13N50/PFF13N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰ Remarkable Switching Characteristics ‰ Unequalled Gate Charge : 28 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.46 Ω (Typ.)
Power Device
Power Device
datasheet PFF13N50 pdf
PFF18N50500V N-Channel MOSFETPower Device
Power Device
datasheet PFF18N50 pdf

Pyramis Corporation “The Silicon System Solutions Company” Applications: •Adaptor •Charger •SMPS Standby Power •LCD Panel Power Features: • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Ordering Information PART NUMBER PFB2N6
Pyramis Corporation
Pyramis Corporation
datasheet PFF2N60 pdf
PFF4N60N-Channel MOSFETPyramis
datasheet PFF4N60 pdf
PFF4N60N-channel MOSFET

PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General Descri
datasheet PFF4N60 pdf

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  

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