P0660ETF PDF Datasheet

The P0660ETF is N-Channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	P0660ETF	N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0660ETF:TO-220F P0660ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω ID 6A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Vo	NIKO-SEM
2	P0660ETF	N-Channel Enhancement Mode MOSFET P0660ETF , P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω @VGS = 10V ID 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage	UNIKC
3	P0660ETFS	N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0660ETF:TO-220F P0660ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω ID 6A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Vo	NIKO-SEM
4	P0660ETFS	N-Channel Enhancement Mode MOSFET P0660ETF , P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω @VGS = 10V ID 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage	UNIKC

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Part No	Description	Manufacturers	PDF
P0660ATF	N-Channel Enhancement Mode MOSFET P0660ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Continuous	UNIKC
P0660ETFS	N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0660ETF:TO-220F P0660ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω ID 6A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Vo	NIKO-SEM
P0660AS	N-Channel Enhancement Mode MOSFET P0660AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-263 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS	UNIKC
P0660ETFS	N-Channel Enhancement Mode MOSFET	UNIKC
P0660ATF	N-Channel Enhancement Mode MOSFET	UNIKC
P0660AT	N-Channel Enhancement Mode MOSFET	UNIKC
P0660AS	N-Channel Enhancement Mode MOSFET	UNIKC

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