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NTE47 PDF DatasheetThe NTE47 is Silicon NPN Transistor High Gain / Low Noise Amp. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | NTE47 | Silicon NPN Transistor High Gain / Low Noise Amp NTE47 Silicon NPN Transistor High Gain, Low Noise Amp
Absolute Maximum Ratings: Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . .
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 NTE |
| 2 | NTE470 | Silicon NPN Transistor RF Power Output NTE470 Silicon NPN Transistor RF Power Output
Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MH- Characteristics: Output Power = 100W (PEP) Minimum Gain
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NTE |
| 3 | NTE471 | Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz
Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state of the art diffused emitter ballasting for improved ruggedness and reliability. Features: D B
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NTE |
| 4 | NTE472 | Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz
Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre driver stages
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NTE |
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