NTE271 PDF Datasheet

The NTE271 is Silicon Complementary Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	NTE271	Silicon Complementary Transistors NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.	NTE
2	NTE2716	Integrated Circuit NMOS / 16K UV Erasable PROM NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384 bit (2048 x 8 bit) Erasable and Electrically Reprogrammable PROM in a 24 Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed p	NTE

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Relevant Search Results

Part No	Description	Manufacturers	PDF
NTE27	Germanium PNP Transistor High Current / High Gain Amp NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high gain and low saturation voltages. Absolute Maximum Ratings: Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . .	NTE
NTE270	Silicon Complementary Transistors Darlington Power Amp / Switch NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Fe	NTE
NTE2708	Integrated Circuit NMOS / 8K UV EPROM / 450ns NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra violet light erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8 bit length. This device is fabricated using N channel silicon gate technology for high speed and	NTE
NTE2V010	Metal Oxide Varistors (MOV)	NTE
NTE2996	Enhancement Mode High Speed Switch	NTE Electronics
NTE299	Silicon NPN Transistor RF Power Amp / Driver	NTE
NTE2989	MOSFET N-Channel / Enhancement Mode High Speed Switch	NTE

List of most widely used semiconductors

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