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NT2955 PDF Datasheet

The NT2955 is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NT2955
Power MOSFET ( Transistor )

NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and c

On Semiconductor
On Semiconductor
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Recommended search results related to NT2955

Part No Description ( Function) Manufacturers PDF
2N2955   SILICON PNP TRANSISTOR

UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2N2955   PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23)

Dc Components
Dc Components
datasheet pdf
2N2955HV   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV

Inchange Semiconductor
Inchange Semiconductor
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2SK2955   Silicon N Channel MOS FET High Speed Power Switching

2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. D

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SK2955   Silicon N Channel MOS FET

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Packag

Renesas
Renesas
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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