NE856M03 PDF Datasheet

The NE856M03 is NPN SILICON TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	NE856M03	NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 FEATURES NEW M03 PACKAGE: Smallest transistor outline package available Low profile, 0.59 mm package height Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GH- HIGH COLLECTOR CURRENT: ICMAX = 100 mA OUTLINE DI	NEC

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Part No	Description	Manufacturers	PDF
NE856	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CU	NEC
NE85600	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.	NEC
NE85618	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.	NEC
NE856M13	NPN SILICON TRANSISTOR	NEC
NE856M02	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER	CEL
NE85639R	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	NEC
NE85639	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	NEC

List of most widely used semiconductors

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