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NE688 PDF DatasheetThe NE688 is SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | NE688 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
LOW PHASE NOISE DISTORTION LOW NOISE: 1.5 dB at 2.0 GH- LOW VOLTAGE OPERATION LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES ALSO AVAILABLE IN CHIP FORM
18 (
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CEL |
| 2 | NE68800 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NONLINEAR MODEL
SCHEMATIC
CCB
NE68800
Q1
LB CCE
LC
LE
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.
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NEC |
| 3 | NE68819 | NONLINEAR MODEL
NONLINEAR MODEL
SCHEMATIC
NE68819
CCBPKG 0.08 pF CCB LBX Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LB 0.24 pF CCE 0.27 pF LE 0.6 nH LEX 0.19 nH Emitter
Q1
LCX 0.5 nH Collector
CCEPKG 0.3 pF
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJ
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NEC |
| 4 | NE688M03 | NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M03
FEATURES
NEW M03 PACKAGE: Smallest transistor outline package available Low profile, 0.59 mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GH- LOW NOISE FIGURE: NF = 1.7 dB at 2 GH- HIGH COL
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NEC |
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