MT3S111 PDF Datasheet

The MT3S111 is Silicon-Germanium NPN Epitaxial Planar Type Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	MT3S111	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:\|S21e\|2=12 dB (typ.) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C)	Toshiba Semiconductor
2	MT3S111P	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: \|S21e\|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25	Toshiba Semiconductor
3	MT3S111TU	Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) High Gain: \|S21e\|2=12.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0�	Toshiba Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
MT3S106FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:\|S21e\|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:m	Toshiba Semiconductor
MT3S107FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.85dB (@f=2GHz) High Gain:\|S21e\|2= 13dB (@f=2GHz) Marking 3 42 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm	Toshiba Semiconductor
MT3S108FS	Silicon-Germanium NPN Epitaxial Planar Type Transistor MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.9dB (@f=2GHz) High Gain:\|S21e\|2=11.5dB (@f=2GHz) Marking 3 43 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit	Toshiba Semiconductor
MT3S46T	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION	Toshiba Semiconductor
MT3S45T	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION	Toshiba Semiconductor
MT3S41T	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION	Toshiba Semiconductor
MT3S41FS	VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION	Toshiba Semiconductor

List of most widely used semiconductors

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