MRF7S35120HSR3 PDF Datasheet

The MRF7S35120HSR3 is RF Power Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	MRF7S35120HSR3	RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6, 2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance: VDD = 32	Motorola Semiconductors
2	MRF7S35120HSR3	RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6, 2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance: VDD = 32	Motorola Semiconductors

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Part No	Description	Manufacturers	PDF
MRF7S21170HR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9, 2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier a	Freescale Semiconductor
MRF7S21170HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9, 2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier a	Freescale Semiconductor
MRF7S19100NR1	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6, 2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier a	Motorola Semiconductor
MRF7S38075HSR3	RF Power Field Effect Transistors	Freescale Semiconductor
MRF7S38075HR3	RF Power Field Effect Transistors	Freescale Semiconductor
MRF7S21170HSR3	RF Power Field Effect Transistors	Freescale Semiconductor
MRF7S21170HR3	RF Power Field Effect Transistors	Freescale Semiconductor

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