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MRF6S9130HR3 PDF DatasheetThe MRF6S9130HR3 is RF Power Field Effect Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6S9130HR3 | RF Power Field Effect Transistors
Freescale Semiconductor Technical Data
Document Number: MRF6S9130H Rev. 4, 5, 2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier a
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Freescale Semiconductor |
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