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MRF6S27050HSR3 PDF DatasheetThe MRF6S27050HSR3 is RF Power Field Effect Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6S27050HSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev. 1, 12, 2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multi
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 Freescale Semiconductor |
| 2 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev. 1, 12, 2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multi
|
Freescale Semiconductor |
|
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