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MRF6S24140HSR3 PDF DatasheetThe MRF6S24140HSR3 is RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6S24140HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor Technical Data
Document Number: MRF6S24140H Rev. 0, 3, 2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scien
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Freescale Semiconductor |
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