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MRF6S23140HR3 PDF DatasheetThe MRF6S23140HR3 is RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6S23140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor Technical Data
Document Number: MRF6S23140H Rev. 1, 5, 2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amp
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Freescale Semiconductor |
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