|
|
|
MRF6S18140HR3 PDF DatasheetThe MRF6S18140HR3 is RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6S18140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF6S18140H Rev. 0, 9, 2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier ampl
|
Freescale Semiconductor |
|
Searching...
Relevant Search Results
Share Link
Sitemap Link
|