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MRF6S18140HR3 PDF Datasheet

The MRF6S18140HR3 is RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 MRF6S18140HR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9, 2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier ampl
Freescale Semiconductor
Freescale Semiconductor




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Part NoDescriptionManufacturersPDF
MRF6S27085HR3 N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1, 2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier ampl
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6S27085HR3 pdf
MRF6S21140HR3 N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1, 2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6S21140HR3 pdf
MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7, 2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6S19140HR3 pdf
MRF6VP41KHSR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP41KHSR6 pdf
MRF6VP41KHR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP41KHR6 pdf
MRF6VP3450HSR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP3450HSR6 pdf
MRF6VP3450HSR5 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP3450HSR5 pdf


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