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MRF5812 PDF DatasheetThe MRF5812 is NPN Silicon RF Microwave Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF5812 | NPN Silicon RF Microwave Transistor MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
PACKAGE STYLE SO-8
FEATURES:
Low Noise 2.5 dB @ 500 MH- Ftau 5.0 GH- @ 10 V, 75 mA Cost Effective SO-8 package
MAXIMUM RATINGS
IC VCBO VCEO
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 ASI |
| 2 | Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MH- Ftau - 5.0 GH- @ 10v, 75mA Cost Effective SO-8 package
SO-8
R1 suffix Tape and Reel, 500 units R2 suffix Tape and Reel, 2500 units
DES
|
 Advanced Power Technology |
|
| 3 | Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
 New Jersey Semiconductor |
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| 4 | MRF5812G | Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MH- Ftau - 5.0 GH- @ 10v, 75mA Cost Effective SO-8 package
SO-8
R1 suffix Tape and Reel, 500 units R2 suffix Tape and Reel, 2500 units
DES
|
Advanced Power Technology |
|
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