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MRF476 PDF DatasheetThe MRF476 is HG RF POWER TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF476 | HG RF POWER TRANSISTOR HG Semiconductors
MRF476HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz.
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
IC 1.0 A
VCE 18 V
VCB 36 V
PDISS
10 W @ TC
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 HGSemi |
| 2 | Silicon NPN Transistor MRF476 Silicon NPN Transistor Final RF Power Output
The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitte
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 ETC |
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| 3 | NPN Silicon RF power transistor ELEFLOW TECHNOLOGIES www.eleflow.com
MRF476
NPN Silicon RF power transistor
MRF476
Description: MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
Maximum Ratings: Symbol BVCES BVCEO BVEBO
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 ELEFLOW TECHNOLOGIES |
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| 4 | NPN SILICON RF POWER TRANSISTOR MRF476
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION:
The ASI MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz.
MAXIMUM RATINGS
IC VCE VCB PDISS TSTG θJC 1.0 A 18 V 36 V 10 W @ TC = 25 °C -65 °C to +150 °C 17.5 °C, W
1 = BAS
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 Advanced Semiconductor |
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