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MRF422 PDF DatasheetThe MRF422 is RF POWER TRANSISTORS NPN SILICON. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF422 | RF POWER TRANSISTORS NPN SILICON MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF422, D
NPN Silicon RF Power Transistor
Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MH- Characteristics Output Power = 150 W (PEP) Minimum Gain = 10 dB E
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 Motorola Semiconductors |
| 2 | The RF Line NPN Silicon RF Power Transistor SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF422, D
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MH- Characteristics Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency
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 Tyco Electronics |
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| 3 | NPN SILICON RF POWER TRANSISTOR
MRF422, MP
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF422 is Designed for 2.0 MH- to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.
PACKAGE STYLE .500 4L FLG
MAXIMUM RATINGS
I V PDISS TJ TSTG θJC 20 A 40 V 290 W @ TC = 25 °C -65
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 Advanced Semiconductor |
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| 4 | MRF422MP | NPN SILICON RF POWER TRANSISTOR
MRF422, MP
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF422 is Designed for 2.0 MH- to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.
PACKAGE STYLE .500 4L FLG
MAXIMUM RATINGS
I V PDISS TJ TSTG θJC 20 A 40 V 290 W @ TC = 25 °C -65
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Advanced Semiconductor |
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