M29DW323DB70N1 PDF Datasheet

The M29DW323DB70N1 is 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	M29DW323DB70N1	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics
2	M29DW323DB70N1E	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics
3	M29DW323DB70N1F	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics
4	M29DW323DB70N1T	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics

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Part No	Description	Manufacturers	PDF
M29DW323	FLASH NOR HIGH DENSITY & CONSUMER FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt ptfl0402-504 STMicroelectronics www.st.com, flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15 m process technology ¾technology shrink on going �	ST Microelectronics
M29DW323DB	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics
M29DW323DB70N1E	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME 10 s per Byte,	ST Microelectronics
M29DW640D	64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory	ST Microelectronics
M29DW324DT90ZE6T	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory	ST Microelectronics
M29DW324DT90ZE6F	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory	ST Microelectronics
M29DW324DT90ZE6E	32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory	ST Microelectronics

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