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Datasheet KTD1304 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTD1304 | Silicon NPN transistor KTD1304
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
E-B 反向击穿电压高，反向放大高，导通电阻低。 High VEBO, high reverse hFE, low on resistance.
用� |  BLUE ROCKET ELECTRONICS | transistor |
| 2 | KTD1304 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor
FEATURES
z High emitter-base voltage. z High reverse hFE. z Low on resistance.
Pb
Lead-free
APPLICATIONS
z Audio muting application.
Production specification
KTD1304
ORDERING INFORMATION
Type No.
Marking
KTD1304
MAX
SOT-23
Package Code SOT-23
MAXIMU |  Galaxy Microelectronics | transistor |
| 3 | KTD1304 | NPN Transistor KTD31 04
TRANSISTOR (NPN)
SOT-23
FEATURES ·High emitter-base voltage ·low on resistance
MARKING: MAX
1. BASE 2. EMITTER 3.COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V |  JinYu | transistor |
| 4 | KTD1304 | NPN Transistors SMD Type
NPN Transistors KTD1304 (KTD1304S)
Transistors
■ Features
● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0 |  Kexin | transistor |
| 5 | KTD1304 | NPN Transistor Plastic-Encapsulate Transistors
FEATURES
• High emitter-base voltage • low on resistance
Marking: MAX
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Te |  HOTTECH | transistor |
KTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTD-LM16 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two  ETC data | | |
| 2 | KTD-LM32 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 3 | KTD-LM64 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two ETC data | | |
| 4 | KTD-LM8 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 5 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING  KEC transistor | | |
| 6 | KTD1028 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTER KEC transistor | | |
| 7 | KTD1028V | EPITAXIAL PLANAR NPN TRANSISTOR KEC transistor | |
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