KM416S8030 PDF Datasheet

The KM416S8030 is 2M x 16Bit x 4 Banks Synchronous DRAM. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	KM416S8030	2M x 16Bit x 4 Banks Synchronous DRAM KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) A	Samsung semiconductor
2	KM416S8030B	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B Revision History Revision 0.0 (May 15, 1999) CMOS SDRAM Changed	Samsung semiconductor
3	KM416S8030BN	128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP KM416S8030BN Revision History Ve	Samsung semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
KM416C1000B	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V	Samsung semiconductor
KM416C1000C	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V	Samsung semiconductor
KM416C1004C	1M x 16Bit CMOS Dynamic RAM with Extended Data Out KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hype	Samsung semiconductor
KM41V4000D	4M x 1Bit CMOS Dynamic RAM with Fast Page Mode	Samsung semiconductor
KM41V16000C	16M x 1Bit CMOS Dynamic RAM	Samsung Semiconductor
KM41C466	CMOS DRAM	Samsung Electronics
KM41C464	CMOS DRAM	Samsung Electronics

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