|
|
Datasheet K4E641612B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4E641612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out K4E661612B, K4E641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), a | Samsung | cmos |
K4E Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4E151611C | 1M x 16Bit CMOS Dynamic RAM K4E171611C, K4E151611C K4E171612C, K4E151612C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper P Samsung cmos | | |
2 | K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out K4E171611D, K4E151611D K4E171612D, K4E151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Pa Samsung cmos | | |
3 | K4E151612C | 1M x 16Bit CMOS Dynamic RAM K4E171611C, K4E151611C K4E171612C, K4E151612C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper P Samsung cmos | | |
4 | K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out K4E171611D, K4E151611D K4E171612D, K4E151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Pa Samsung cmos | | |
5 | K4E160411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out K4E170411D, K4E160411D K4E170412D, K4E160412D
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Samsung cmos | | |
6 | K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out K4E170411D, K4E160411D K4E170412D, K4E160412D
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Samsung cmos | | |
7 | K4E160811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out K4E170811D, K4E160811D K4E170812D, K4E160812D
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Samsung cmos | |
Esta página es del resultado de búsqueda del K4E641612B. Si pulsa el resultado de búsqueda de K4E641612B se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |