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Datasheet K39 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | K390 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 |
 Knox Inc |
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| 12 | K3903 | MOSFET ( Transistor ) - 2SK3903 2SK3903
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3903
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 |
 Toshiba Semiconductor |
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| 11 | K3911 | Field Effect Transistor 2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
• • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low l |
 Toshiba |
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| 10 | K3918 | MOSFET ( Transistor ) - 2SK3918 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
ORDERING INFORMATION
PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
features a low on-state resistance and excelle |
 NEC |
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