K1S321611C PDF Datasheet

The K1S321611C is 2Mx16 bit Uni-Transistor Random Access Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	K1S321611C	2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected	Samsung
2	K1S321611C-FI70	2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected	Samsung
3	K1S321611C-I	2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected	Samsung

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Relevant Search Results

Part No	Description	Manufacturers	PDF
K1S321611C-FI70	2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected	Samsung
K1S321611C-I	2Mx16 bit Uni-Transistor Random Access Memory Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected	Samsung
K1S321615M	2Mx16 bit Uni-Transistor Random Access Memory K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change input and output reference voltage from 1	Samsung semiconductor
K1S3216BCD	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung semiconductor
K1S3216BCC	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	SAMSUNG Electronics
K1S3216B1C	2Mx16 bit Uni-Transistor Random Access Memory	Samsung semiconductor
K1S32161CC	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung semiconductor

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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