IXTY5N50P PDF Datasheet

The IXTY5N50P is (IXTx5N50P) PolarHV Power MOSFET - N-Channel Enhancement Mode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTY5N50P	(IXTx5N50P) PolarHV Power MOSFET - N-Channel Enhancement Mode Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS	IXYS Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXTY55N075T	Power MOSFET, Transistor Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5 V A mΩ TO-220 (IXTP) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum	IXYS Corporation
IXTY50N085T	Power MOSFET, Transistor Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditi	IXYS Corporation
IXTY8N65X2	Power MOSFET, Transistor	IXYS
IXTY64N055T	Power MOSFET, Transistor	IXYS
IXTY55N075T	Power MOSFET, Transistor	IXYS Corporation
IXTY50N085T	Power MOSFET, Transistor	IXYS Corporation

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