IXTY4N60P PDF Datasheet

The IXTY4N60P is PolarHV Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTY4N60P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P V= DSS ID25 = ≤RDS(on) 600 4 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM I D25 IDM IAR E AR EAS dv, dt PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ	IXYS

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Part No	Description	Manufacturers	PDF
IXTY44N10T	Power MOSFET, Transistor TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY44N10T IXTP44N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv, dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit	IXYS Corporation
IXTY48P05T	Power MOSFET, Transistor TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25�	IXYS
IXTY4N65X2	Power MOSFET, Transistor Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A 850m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv, dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25 C to 150 C TJ =	IXYS
IXTY8N65X2	Power MOSFET, Transistor	IXYS
IXTY64N055T	Power MOSFET, Transistor	IXYS
IXTY5N50P	(IXTx5N50P) PolarHV Power MOSFET - N-Channel Enhancement Mode	IXYS Corporation
IXTY55N075T	Power MOSFET, Transistor	IXYS Corporation

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