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IXTY1N80 PDF DatasheetThe IXTY1N80 is High Voltage MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IXTY1N80 | High Voltage MOSFET
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
RDS(on)
= 800 V = 750 mA = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 15
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 IXYS |
| 2 | IXTY1N80P | Power MOSFET, Transistor Preliminary Technical Information
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P
VDSS = ID25 = ≤RDS(on)
800V 1A 14Ω
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV, dt
PD TJ TJM Tstg TL TSOLD
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IXYS |
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