IXTV200N10TS PDF Datasheet

The IXTV200N10TS is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTV200N10TS	Power MOSFET, Transistor TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting f	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXTV22N50PS	PolarHV Power MOSFET Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab t	IXYS
IXTV22N50P	PolarHV Power MOSFET Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab t	IXYS
IXTV26N60PS	PolarHV Power MOSFET Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS VDSS ID25 RDS(on) TO-247 (IXTH) = 600 V = 26 A ≤ 270 mΩ Symbol VDSS VDGR VGSS VGSM I	IXYS
IXTV36N50PS	PolarHV Power MOSFET	IXYS
IXTV36N50P	PolarHV Power MOSFET	IXYS
IXTV30N60PS	PolarHV Power MOSFET	IXYS
IXTV30N60P	PolarHV Power MOSFET	IXYS

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