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IXTT52N30P PDF Datasheet

The IXTT52N30P is PolarHT Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 IXTT52N30P PolarHT Power MOSFET

Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ52N30P IXTT52N30P VDSS ID25 RDS(on) = 300 V = 52 A = 66 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS
IXYS Corporation
IXYS Corporation




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Relevant Search Results

Part NoDescriptionManufacturersPDF
IXTT50P10 Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P10 IXTT 50P10 VDSS ID25 RDS(on) = -100 V = -50 A = 55 mΩ TO-247 AD (IXTH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 1
IXYS
IXYS
datasheet IXTT50P10 pdf
IXTT96N20P (IXTx96N20P) N-Channel Engancement ModeIXYS Corporation
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IXTT96N15P (IXTQ96N15P / IXTT96N15P) N-Channel Enhancement Mode Preliminary Data SheetIXYS Corporation
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IXTT88N30P PolarHT Power MOSFETIXYS
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IXTT88N15 (IXTH88N15 / IXTT88N15) High Current Power MOSFETIXYS Corporation
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