IXTT30N60P PDF Datasheet

The IXTT30N60P is PolarHV Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTT30N60P	PolarHV Power MOSFET Advanced Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS ID25 = 600 V = 30 A RDS(on) ≤ 240 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg	IXYS

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Part No	Description	Manufacturers	PDF
IXTT36N50P	(IXTQ36N50P / IXTT36N50P) Power MOSFET Advanced Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N50P IXTT 36N50P VDSS ID25 RDS(on) = 500 V = 36 A ≤ 170 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;	IXYS
IXTT30N50P	PolarHV Power MOSFET Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test	IXYS
IXTT30N60L2	Power MOSFET, Transistor Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Con	IXYS
IXTT96N20P	(IXTx96N20P) N-Channel Engancement Mode	IXYS Corporation
IXTT96N15P	(IXTQ96N15P / IXTT96N15P) N-Channel Enhancement Mode Preliminary Data Sheet	IXYS Corporation
IXTT88N30P	PolarHT Power MOSFET	IXYS
IXTT88N15	(IXTH88N15 / IXTT88N15) High Current Power MOSFET	IXYS Corporation

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