IXTQ200N085T PDF Datasheet

The IXTQ200N085T is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTQ200N085T	Power MOSFET, Transistor Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 17	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXTQ23N60Q	Power MOSFETs Q-Class Power MOSFETs Q-Class IXTQ 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv, dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions T	IXYS Corporation
IXTQ22N50P	PolarHV Power MOSFET Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab t	IXYS
IXTQ26N60P	PolarHV Power MOSFET Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS VDSS ID25 RDS(on) TO-247 (IXTH) = 600 V = 26 A ≤ 270 mΩ Symbol VDSS VDGR VGSS VGSM I	IXYS
IXTQ96N20P	(IXTx96N20P) N-Channel Engancement Mode	IXYS Corporation
IXTQ96N15P	(IXTQ96N15P / IXTT96N15P) N-Channel Enhancement Mode Preliminary Data Sheet	IXYS Corporation
IXTQ88N30P	PolarHT Power MOSFET	IXYS
IXTQ82N25P	Power MOSFET, Transistor	IXYS Corporation

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