IXTP44N10T PDF Datasheet

The IXTP44N10T is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTP44N10T	Power MOSFET, Transistor TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY44N10T IXTP44N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv, dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXTP42N25P	Polar N-channel MOSFETs Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 42N25P IXTA 42N25P IXTP 42N25P VDSS ID25 RDS(on) = 250 V = 42 A = 84 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to	IXYS Corporation
IXTP4N60P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P V= DSS ID25 = ≤RDS(on) 600 4 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM I D25 IDM IAR E AR EAS dv, dt PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ	IXYS
IXTP4N80P	Power MOSFET, Transistor Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25	IXYS
IXTP98N075T	Power MOSFET, Transistor	IXYS Corporation
IXTP90N075T2	Power MOSFET, Transistor	IXYS
IXTP90N055T	Power MOSFET, Transistor	IXYS Corporation
IXTP8N65X2M	Power MOSFET, Transistor	IXYS

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