IXTP230N075T2 PDF Datasheet

The IXTP230N075T2 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTP230N075T2	Power MOSFET, Transistor Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA230N075T2 IXTP230N075T2 VDSS = ID25 = RDS(on) ≤ 75V 230A 4.2mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25�	IXYS

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Part No	Description	Manufacturers	PDF
IXTP2N60P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 2N60P IXTY 2N60P VDSS ID25 RDS(on) = 500 = 2 ≤ 5.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M	IXYS Corporation
IXTP2N80	High Voltage MOSFET Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1	IXYS Corporation
IXTP2R4N50P	PolarHV Power MOSFET Advance Technical Information IXTP 2R4N50P IXTY 2R4N50P = 500 V = 2.4 A Ω ≤ 3.75 PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 2R4N50P IXTY 2R4N50P VDSS ID25 RDS(on) Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°	IXYS
IXTP98N075T	Power MOSFET, Transistor	IXYS Corporation
IXTP90N075T2	Power MOSFET, Transistor	IXYS
IXTP90N055T	Power MOSFET, Transistor	IXYS Corporation
IXTP8N65X2M	Power MOSFET, Transistor	IXYS

List of most widely used semiconductors

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