IXTP1R4N60P PDF Datasheet

The IXTP1R4N60P is PolarHV Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTP1R4N60P	PolarHV Power MOSFET Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R4N60P IXTY 1R4N60P IXTU 1R4N60P VDSS ID25 RDS(on) = 600 = 1.4 ≤ 9.0 V A Ω TO-251 AA (IXTU) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Weight Maximum tab temperature for sold	IXYS

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Part No	Description	Manufacturers	PDF
IXTP1N100	High Voltage MOSFET Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C	IXYS Corporation
IXTP180N055T	(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ =	IXYS Corporation
IXTP10N60PM	PolarHV Power MOSFET Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ	IXYS Corporation
IXTP98N075T	Power MOSFET, Transistor	IXYS Corporation
IXTP90N075T2	Power MOSFET, Transistor	IXYS
IXTP90N055T	Power MOSFET, Transistor	IXYS Corporation
IXTP8N65X2M	Power MOSFET, Transistor	IXYS

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