IXTP12N65X2 PDF Datasheet

The IXTP12N65X2 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTP12N65X2	Power MOSFET, Transistor Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V 12A 300m TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv, dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25 C to 150	IXYS

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Part No	Description	Manufacturers	PDF
IXTP1N100	High Voltage MOSFET Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C	IXYS Corporation
IXTP180N055T	(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ =	IXYS Corporation
IXTP10N60PM	PolarHV Power MOSFET Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ	IXYS Corporation
IXTP98N075T	Power MOSFET, Transistor	IXYS Corporation
IXTP90N075T2	Power MOSFET, Transistor	IXYS
IXTP90N055T	Power MOSFET, Transistor	IXYS Corporation
IXTP8N65X2M	Power MOSFET, Transistor	IXYS

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