IXTP05N100 PDF Datasheet

The IXTP05N100 is High Voltage MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTP05N100	High Voltage MOSFET High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 05N100 VDSS IXTP 05N100 I D25 RDS(on) = 1000 V = 750 mA = 17 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Co	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXTP02N50D	(IXTx02N50D) High Voltage MOSFET High Voltage MOSFET N-Channel, Depletion Mode Preliminary Data Sheet IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS(on) = 30 Ω Symbol VDSX VDGX VGS VGSM IDSS IDM PD TJ TJM Tstg TL TISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transien	IXYS Corporation
IXTP01N100D	(IXTx01N100D) N-channel Depletion Mode MOSFETs High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS(on) = 110 Preliminary Data Sheet Symbol VDSX VDGX VGS VGSM IDSS IDM PD TJ TJM Tstg TL TISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Tr	IXYS Corporation
IXTP08N50D2	Depletion Mode MOSFET Preliminary Technical Information Depletion Mode MOSFET IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 800mA 4.6Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC	IXYS Corporation
IXTP98N075T	Power MOSFET, Transistor	IXYS Corporation
IXTP90N075T2	Power MOSFET, Transistor	IXYS
IXTP90N055T	Power MOSFET, Transistor	IXYS Corporation
IXTP8N65X2M	Power MOSFET, Transistor	IXYS

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