IXTN600N04T2 PDF Datasheet

The IXTN600N04T2 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTN600N04T2	Power MOSFET, Transistor TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°	IXYS

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXTN61N50	(IXTN58N50 / IXTN61N50) Power MOSFET High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50, 60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4)	IXYS
IXTN62N50L	Power MOSFET, Transistor LinearTM Power MOSFET w, Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN62N50L VDSS ID25 RDS(on) = 500V = 62A ≤ 100mΩ miniBLOC E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ =	IXYS
IXTN60N50L2	Power MOSFET, Transistor Preliminary Technical Information Linear L2TM Power MOSFET N-Channel Enhancement Mode Extended FBSOA IXTN60N50L2 VDSS ID25 RDS(on) = = ≤ 500V 53A 100mΩ miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25�	IXYS
IXTN62N50L	Power MOSFET, Transistor	IXYS
IXTN61N50	(IXTN58N50 / IXTN61N50) Power MOSFET	IXYS
IXTN60N50L2	Power MOSFET, Transistor	IXYS
IXTN58N50	(IXTN58N50 / IXTN61N50) Power MOSFET	IXYS

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