IXTK200N10L2 PDF Datasheet

The IXTK200N10L2 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTK200N10L2	Power MOSFET, Transistor Advance Technical Information Linear L2TM Power MOSFET w, Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque (IXTK)	IXYS

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Part No	Description	Manufacturers	PDF
IXTK21N100	High Voltage MegaMOSTMFETs High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50, 60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300	IXYS Corporation
IXTK250N10	High Current MegaMOSFET Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1	IXYS Corporation
IXTK200N10P	PolarHTTM Power MOSFET Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTK 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1	IXYS Corporation
IXTK90P20P	Power MOSFET, Transistor	IXYS
IXTK90N25L2	Power MOSFET, Transistor	IXYS
IXTK88N30P	PolarHT Power MOSFET	IXYS
IXTK82N25P	Power MOSFET, Transistor	IXYS Corporation

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