IXTK150N15P PDF Datasheet

The IXTK150N15P is Polar N-channel MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXTK150N15P	Polar N-channel MOSFETs Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N15P IXTK 150N15P VDSS = 150 V ID25 = 150 A RDS(on) ≤ 13 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXTK100N25P	PolarHT Power MOSFET N-Channel Enhancement Mode Advanced Technical Information PolarHTTM Power MOSFET IXTQ 100N25P IXTK 100N25P IXTT 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case fo	IXYS Corporation
IXTK102N30P	PolarHT Power MOSFET PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M	IXYS Corporation
IXTK120N25	High Current MegaMOSFET Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS =	IXYS Corporation
IXTK90P20P	Power MOSFET, Transistor	IXYS
IXTK90N25L2	Power MOSFET, Transistor	IXYS
IXTK88N30P	PolarHT Power MOSFET	IXYS
IXTK82N25P	Power MOSFET, Transistor	IXYS Corporation

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