IXGT32N60BD1 PDF Datasheet

The IXGT32N60BD1 is HiPerFAST IGBTwith Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXGT32N60BD1	HiPerFAST IGBTwith Diode HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC =	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXGT30N60BD1	HiPerFASTTM IGBT with Diode HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC =	IXYS Corporation
IXGT32N60C	(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C	IXYS Corporation
IXGT30N60B2	(IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KH- hard switching and up to 150 KH- resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 2	IXYS Corporation
IXGT72N60B3	GenX3 B3-Class IGBTs	IXYS Corporation
IXGT72N60A3	GenX3 600V IGBT	IXYS Corporation
IXGT6N170A	High Voltage IGBT	IXYS Corporation
IXGT6N170	High Voltage IGBT	IXYS

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