IXGQ90N33TC PDF Datasheet

The IXGQ90N33TC is IGBTs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXGQ90N33TC	IGBTs Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC=	IXYS Corporation
2	IXGQ90N33TCD1	IGBTs Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC=	IXYS Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
IXGQ90N27PB	IGBT, Insulated Gate Bipolar Transistor Preliminary Technical Information PolarTM IGBT for PDP Applications IXGQ90N27PB VCES = = ICP VCE(sat) ≤ 270 V 340 A 2.1 V Symbol Test Conditions Maximum Ratings TO-3P VCES VGEM IC25 ICPEAK I C(RMS) SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C 270 ±30 V V A A A	IXYS
IXGQ90N33TCD1	IGBTs Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC=	IXYS Corporation
IXGQ90N33TCD1	IGBTs	IXYS Corporation
IXGQ90N27PB	IGBT, Insulated Gate Bipolar Transistor	IXYS
IXGQ85N33PCD1	High Speed IGBT	IXYS
IXGQ28N120BD1	High Voltage IGBT	IXYS

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