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IXGP20N120 PDF DatasheetThe IXGP20N120 is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IXGP20N120 | IGBT, Insulated Gate Bipolar Transistor IGBT
IXGA 20N120 VCES IXGP 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE =
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 IXYS Corporation |
| 2 | IXGP20N120A3 | GenX3 1200V IGBTs GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kH- Switching
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
VCES = 1200V IC110 = 20A VCE(sat) ≤ 2.5V
TO-263 AA (IXGA)
G E C (Tab)
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
Test Conditions TJ =
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IXYS Corporation |
| 3 | IXGP20N120B | High Voltage IGBT High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1
Preliminary Data Sheet
VCES IC25 VCE(sat)
tfi(typ)
= 1200 V = 40 A = 3.4 V = 160 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC =
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 IXYS |
| 4 | IXGP20N120B3 | GenX3 1200V IGBT Preliminary Technical Information
GenX3TM 1200V IGBT
IXGA20N120B3 IXGP20N120B3
VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V
High Speed Low Vsat PT IGBTs 3-20 kH- Switching
TO-263 (IXGA)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
Test Conditions TJ
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IXYS Corporation |
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