IXGN80N60A2D1 PDF Datasheet

The IXGN80N60A2D1 is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXGN80N60A2D1	IGBT, Insulated Gate Bipolar Transistor Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transie	IXYS

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Part No	Description	Manufacturers	PDF
IXGN82N120C3H1	High-Speed PT IGBT Advance Technical Information GenX3TM 1200V IGBT w, Diode High-Speed PT IGBT for 20-50 kH- Switching IXGN82N120C3H1 VCES IC110 VCE(sat) = 1200V = 58A ≤ 3.9V SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50, 60H- IISOL �	IXYS Corporation
IXGN80N60A2	IGBT, Insulated Gate Bipolar Transistor Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transie	IXYS
IXGN82N120C3H1	High-Speed PT IGBT	IXYS Corporation
IXGN80N60A2	IGBT, Insulated Gate Bipolar Transistor	IXYS
IXGN60N60C2D1	IGBT, Insulated Gate Bipolar Transistor	IXYS Corporation
IXGN60N60C2	IGBT, Insulated Gate Bipolar Transistor	IXYS Corporation

List of most widely used semiconductors

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